Formation of uniaxially (1120) textured ZnO films on glass substrates

被引：30

作者：

Yanagitani, T ^{[1
]}

Matsukawa, M ^{[1
]}

Watanabe, Y ^{[1
]}

Otani, T ^{[1
]}

机构：

[1] Doshisha Univ, Fac Engn, Kyoto 6100321, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 276卷 / 3-4期

基金：

日本学术振兴会;

关键词：

X-ray diffraction; physical vapor deposition processes; zinc compounds; piezoelectric materials;

D O I：

10.1016/j.jcrysgro.2004.12.013

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Making use of the RF magnetron sputtering technique, we have succeeded in fabricating ZnO films where c-axis of crystallites are unidirectionally aligned in the plane, without the mechanism of epitaxy. The alignment of c-axis in the plane was then carefully investigated by the X-ray pole figure analysis and atomic force microscope measurements. From these results, we have revealed the effect of substrate position during sputtering on the c-axis alignment in the plane. We have also pointed out the important effect of the oxygen ions in the RF plasma on the (1 12 0) texture formation. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：424 / 430

页数：7

共 13 条

[1]

ARMSTRONG A, P 1972 IEEE ULTR S, P370

[2] CRYSTALLOGRAPHIC ORIENTATION OF ZINC OXIDE FILMS DEPOSITED BY TRIODE SPUTTERING [J].