Lithography of high spatial density biosensor structures with sub-100 nm spacing by MeV proton beam writing with minimal proximity effect

被引：43

作者：

Whitlow, HJ

Ng, ML

Auzelyté, V

Maximov, I

Montelius, L

van Kan, JA

Bettiol, AA

Watt, F

机构：

[1] Lund Inst Technol, Div Nucl Phys, SE-22100 Lund, Sweden

[2] Nanometre Consortium, SE-22100 Lund, Sweden

[3] Malmo Hgsk, Sch Technol & Soc, SE-20506 Malmo, Sweden

[4] Lund Inst Technol, Div Solid State Phys, S-22100 Lund, Sweden

[5] Natl Univ Singapore, Ctr Ion Beam Applicat, Dept Phys, Singapore 117542, Singapore

来源：

NANOTECHNOLOGY | 2004年 / 15卷 / 01期

关键词：

D O I：

10.1088/0957-4484/15/1/040

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Metal electrode structures for biosensors with a high spatial density and similar to85 nm gaps have been produced using focused megaelectronvolt (MeV) proton beam writing of poly-(methyl methacrylate) positive resist combined with metal lift-off. The minimal proximity exposure and straight proton trajectories in (similar to100 nm) resist layers for focused MeV proton beam writing are strongly indicative that ultimate electrode gap widths approaching a few nanometres are achievable.

引用

页码：223 / 226

页数：4

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