The effects of light-heavy hole transitions on the cutoff wavelengths of far infrared detectors

被引：11

作者：

Perera, AGU ^{[1
]}

Matsik, SG

Rinzan, MBM

Weerasekara, A

Alevli, M

Liu, HC

Buchanan, M

Zvonkov, B

Gavrilenko, V

机构：

[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[3] Inst Phys Microstruct, Nizhny Novgorod, Russia

来源：

INFRARED PHYSICS & TECHNOLOGY | 2003年 / 44卷 / 5-6期

关键词：

D O I：

10.1016/S1350-4495(03)00154-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Results are presented on the effects of doping variation on the cutoff wavelength (lambda(c)) of homojunction interfacial workfunction internal photoemission far infrared detectors. The behavior at low doping (<10(19) cm(-3)) is well predicted by the free carrier absorption model used previously. However at high doping the observed A, is much shorter than the values predicted by the workfunction obtained from Arrhenius plots. An explanation for the reduced A. in the high doping region is presented using a model for depletion of the heavy hole band due to direct transitions from the heavy hole to light hole band. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：347 / 353

页数：7

共 12 条

[1] SCATTERING RATES FOR HOLES NEAR THE VALENCE-BAND EDGE IN SEMICONDUCTORS [J].

BRUDEVOLL, T ;

FJELDLY, TA ;

BAEK, J ;

SHUR, MS .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) :7373-7382

[2] Infrared Space Observatory observations of IRAS 16594-4656:: A new proto-planetary nebula with a strong 21 micron dust feature [J].

García-Lario, P ;

Manchado, A ;

Ulla, A ;

Manteiga, M .

ASTROPHYSICAL JOURNAL, 1999, 513 (02) :941-946

[3] A SIMPLE EXPRESSION FOR BAND-GAP NARROWING (BGN) IN HEAVILY DOPED SI, GE, GAAS AND GEXSI1-X STRAINED LAYERS [J].

JAIN, SC ;

ROULSTON, DJ .

SOLID-STATE ELECTRONICS, 1991, 34 (05) :453-465

[4] GaAs multilayer p(+)-i homojunction far-infrared detectors [J].

Perera, AGU ;

Yuan, HX ;

Gamage, SK ;

Shen, WZ ;

Francombe, WH ;

Liu, HC ;

Buchanan, M ;

Schaff, WJ .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (07) :3316-3319

[5] Heterojunction wavelength-tailorable far-infrared photodetectors with response out to 70 μm [J].

Perera, AGU ;

Matsik, SG ;

Yaldiz, B ;

Liu, HC ;

Shen, A ;

Gao, M ;

Wasilewski, ZR ;

Buchanan, M .

APPLIED PHYSICS LETTERS, 2001, 78 (15) :2241-2243

[6]

PERERA AGU, 2001, HDB THIN FILM DEVICE

[7]

PERERA AGU, 1999, OPTO-ELECTRON REV, V7, P153

[8] Bias effects in high performance GaAs homojunction far-infrared detectors [J].

Shen, WZ ;

Perera, AGU ;

Liu, HC ;

Buchanan, M ;

Schaff, WJ .

APPLIED PHYSICS LETTERS, 1997, 71 (18) :2677-2679

[9] Effect of emitter layer concentration on the performance of GaAs p+-i homojunction far-infrared detectors:: A comparison of theory and experiment [J].

Shen, WZ ;

Perera, AGU ;

Francombe, MH ;

Liu, HC ;

Buchanan, M ;

Schaff, WJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (08) :1671-1677

[10]

SHEPHERD FD, 1992, P SOC PHOTO-OPT INS, V1735, P250, DOI 10.1117/12.138629

← 1 2 →