Effect of emitter layer concentration on the performance of GaAs p+-i homojunction far-infrared detectors:: A comparison of theory and experiment

被引：21

作者：

Shen, WZ ^{[1
]}

Perera, AGU

Francombe, MH

Liu, HC

Buchanan, M

Schaff, WJ

机构：

[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[3] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 08期

基金：

美国国家航空航天局;

关键词：

FIR detectors; GaAs; homojunction; interfacial work function;

D O I：

10.1109/16.704362

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of GaAs multilayer (p(+)-i-p(+)-i-...) homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (FIR) detectors as a function of emitter layer (p(+)) concentration Is reported. The dark current characteristics have been investigated and compared with a model which includes the space charge, tunneling, and multiple-image-force effects. The experimentally determined detector cutoff wavelength is found to be in reasonable agreement with the high density (HD) theory. The detector responsivity follows well the quantum efficiency predicted by scaling the free carrier absorption coefficient linearly with the doping concentration. All these comparisons are necessary to design and optimize GaAs HIWIP FIR detectors.

引用

页码：1671 / 1677

页数：7

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