High sensitivity Si-based backward diodes for zero-biased square-law detection and the effect of post-growth annealing on performance

被引:13
作者
Jin, N
Yu, RH
Chung, SY
Berger, PR
Thompson, PE
Fay, P
机构
[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
[2] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA
[3] USN, Res Lab, Washington, DC 20375 USA
[4] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
基金
美国国家科学基金会;
关键词
backward diodes; millimeter-wave detectors; Si/SiGe heterojunction;
D O I
10.1109/LED.2005.852738
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-sensitivity Si-based backward diodes were realized that are monolithically integratable with transistor circuitry. Potential applications include large area focal plane arrays. The Si-based backward diodes exhibit a high zero-biased curvature coefficient, 7, of 31 V-1 and a low zero biased junction capacitance, C-j, of 9 fF/mu m(2), all at room temperature. The predicted low frequency voltage sensitivity, beta(V), for a 50 Omega source is 3100 V/W. The high sensitivity, low junction capacitance, and Si/SiGe hetero-junction bipolar transistor compatibility of the Si-based backward diodes make them very attractive for zero-bias square-law detector applications.
引用
收藏
页码:575 / 578
页数:4
相关论文
共 18 条
  • [1] BURRUS CA, 1963, IEEE T MICROW THEORY, V11, P357
  • [2] Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy
    Chung, SY
    Jin, N
    Pavlovicz, RE
    Berger, PR
    Yu, RH
    Fang, ZQ
    Thompson, PE
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) : 747 - 753
  • [3] Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration
    Chung, SY
    Jin, N
    Berger, PR
    Yu, RH
    Thompson, PE
    Lake, R
    Rommel, SL
    Kurinec, SK
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (14) : 2688 - 2690
  • [4] Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy
    Chung, SY
    Jin, N
    Rice, AT
    Berger, PR
    Yu, RH
    Fang, ZQ
    Thompson, PE
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) : 9104 - 9110
  • [5] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS
    CHYNOWETH, A
    LOGAN, RA
    FELDMANN, WL
    [J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &
  • [6] Ni/Ag metallization for SiGeHBTs using a Ni silicide contact
    Eberhardt, J
    Kasper, E
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (09) : L47 - L49
  • [7] Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions
    Jin, N
    Chung, SY
    Rice, AT
    Berger, PR
    Thompson, PE
    Rivas, C
    Lake, R
    Sudirgo, S
    Kempisty, JJ
    Curanovic, B
    Rommel, SL
    Hirschman, KD
    Kurinec, SK
    Chi, PH
    Simons, DS
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (09) : 1876 - 1884
  • [8] CURVATURE COEFFICIENT OF GERMANIUM TUNNEL AND BACKWARD DIODES
    KARLOVSKY, J
    [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1109 - +
  • [9] GAAS PLANAR DOPED BARRIER DIODES FOR MILLIMETER-WAVE DETECTOR APPLICATIONS
    KEARNEY, MJ
    CONDIE, A
    DALE, I
    [J]. ELECTRONICS LETTERS, 1991, 27 (09) : 721 - 722
  • [10] MEHMET MC, 2002, IEDM, P375