High-sensitivity Si-based backward diodes were realized that are monolithically integratable with transistor circuitry. Potential applications include large area focal plane arrays. The Si-based backward diodes exhibit a high zero-biased curvature coefficient, 7, of 31 V-1 and a low zero biased junction capacitance, C-j, of 9 fF/mu m(2), all at room temperature. The predicted low frequency voltage sensitivity, beta(V), for a 50 Omega source is 3100 V/W. The high sensitivity, low junction capacitance, and Si/SiGe hetero-junction bipolar transistor compatibility of the Si-based backward diodes make them very attractive for zero-bias square-law detector applications.
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页码:575 / 578
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BURRUS CA, 1963, IEEE T MICROW THEORY, V11, P357