GAAS PLANAR DOPED BARRIER DIODES FOR MILLIMETER-WAVE DETECTOR APPLICATIONS

被引：30

作者：

KEARNEY, MJ ^{[1
]}

CONDIE, A ^{[1
]}

DALE, I ^{[1
]}

机构：

[1] GEC PLESSEY SEMICOND,LINCOLN LN6 2LF,ENGLAND

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 09期

关键词：

MICROWAVE DEVICES AND COMPONENTS; DIODES; GALLIUM ARSENIDE;

D O I：

10.1049/el:19910448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxially grown GaAs planar doped barrier diodes have been designed and fabricated into coplanar structures specifically for millimetre-wave zero-bias detector applications. Results at 35 GHz and 94 GHz show that the tangential sensitivity, voltage sensitivity and dynamic range of these devices can significantly exceed those of any comparable Schottky diode detector. This is the first report of such a result.

引用

页码：721 / 722

页数：2

共 6 条

[1] HOT-ELECTRON PROPERTIES OF GAAS PLANAR-DOPED BARRIER DIODES
COUCH, NR
KEARNEY, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (10) : 5083 - 5085
[2] DALE I, 1990, 20TH P EUR MICR C BU, V1, P605
[3] ASYMMETRIC PLANAR DOPED BARRIER DIODES FOR MIXER AND DETECTOR APPLICATIONS
KEARNEY, MJ
KELLY, MJ
DAVIES, RA
KERR, TM
REES, PK
CONDIE, A
DALE, I
[J]. ELECTRONICS LETTERS, 1989, 25 (21) : 1454 - 1456
[4] TEMPERATURE-DEPENDENT BARRIER HEIGHTS IN BULK UNIPOLAR DIODES LEADING TO IMPROVED TEMPERATURE STABLE PERFORMANCE
KEARNEY, MJ
KELLY, MJ
CONDIE, A
DALE, I
[J]. ELECTRONICS LETTERS, 1990, 26 (10) : 671 - 672
[5] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
MALIK, RJ
AUCOIN, TR
ROSS, RL
BOARD, K
WOOD, CEC
EASTMAN, LF
[J]. ELECTRONICS LETTERS, 1980, 16 (22) : 836 - 837
[6] MILLIMETER-WAVE PLANAR INP SCHOTTKY DIODES AND THEIR SMALL-SIGNAL EQUIVALENT-CIRCUIT
NEIDERT, RE
BINARI, SC
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (11) : 1694 - 1698

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