HOT-ELECTRON PROPERTIES OF GAAS PLANAR-DOPED BARRIER DIODES

被引：5

作者：

COUCH, NR

KEARNEY, MJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 10期

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D O I：

10.1063/1.343734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5083 / 5085

页数：3

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