HOT-ELECTRON INJECTION BY GRADED ALXGA1-XAS

被引：6

作者：

LONG, AP

BETON, PH

KELLY, MJ

KERR, TM

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 03期

关键词：

D O I：

10.1049/el:19860091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：130 / 131

页数：2

相关论文

共 4 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH AND ELECTRICAL TRANSPORT OF GRADED BARRIERS FOR NON-LINEAR CURRENT CONDUCTION [J].

GOSSARD, AC ;

BROWN, W ;

ALLYN, CL ;

WEIGMANN, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :694-700

[2] MOCVD-GROWN ALGAAS/GAAS HOT-ELECTRON TRANSISTOR WITH A BASE WIDTH OF 30 NM [J].

HASE, I ;

KAWAI, H ;

IMANAGA, S ;

KANEKO, K ;

WATANABE, N .

ELECTRONICS LETTERS, 1985, 21 (17) :757-758

[3] HOT-ELECTRON SPECTROSCOPY [J].

HAYES, JR ;

LEVI, AFJ ;

WIEGMANN, W .

ELECTRONICS LETTERS, 1984, 20 (21) :851-852

[4] IMPORTANCE OF ELECTRON-SCATTERING WITH COUPLED PLASMON-OPTICAL PHONON MODES IN GAAS PLANAR-DOPED BARRIER TRANSISTORS [J].

HOLLIS, MA ;

PALMATEER, SC ;

EASTMAN, LF ;

DANDEKAR, NV ;

SMITH, PM .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (12) :440-443