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MOCVD-GROWN ALGAAS/GAAS HOT-ELECTRON TRANSISTOR WITH A BASE WIDTH OF 30 NM

被引：7
作者：
HASE, I
KAWAI, H
IMANAGA, S
KANEKO, K
WATANABE, N
机构：
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 17期
关键词：
D O I：
10.1049/el:19850533
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：757 / 758
页数：2
相关论文
共 6 条
[1]   TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - AMPLIFIERS OPERATING UP TO THE INFRARED [J].
HEIBLUM, M .
SOLID-STATE ELECTRONICS, 1981, 24 (04) :343-366
[2]   IMPORTANCE OF ELECTRON-SCATTERING WITH COUPLED PLASMON-OPTICAL PHONON MODES IN GAAS PLANAR-DOPED BARRIER TRANSISTORS [J].
HOLLIS, MA ;
PALMATEER, SC ;
EASTMAN, LF ;
DANDEKAR, NV ;
SMITH, PM .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (12) :440-443
[3]   STRUCTURE OF MOCVD GROWN ALAS/GAAS HETERO-INTERFACES OBSERVED BY TRANSMISSION ELECTRON-MICROSCOPY [J].
KAJIWARA, K ;
KAWAI, H ;
KANEKO, K ;
WATANABE, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L85-L88
[4]  
MEAD CA, 1960, P IRE, V48, P359
[5]   HOT-ELECTRON CAMEL TRANSISTOR [J].
SHANNON, JM .
IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1979, 3 (05) :142-144
[6]  
Yokoyama N., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P532
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