COMPUTER-SIMULATION OF CARRIER TRANSPORT IN PLANAR DOPED BARRIER DIODES

被引：5

作者：

COOK, RK

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 05期

关键词：

D O I：

10.1063/1.93963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：439 / 441

页数：3

相关论文

共 6 条

[1] ONSET OF DIFFUSION-DRIFT EMISSION REGIME AND THE TRANSITION FROM EXPONENTIAL TO LINEAR CURRENT-VOLTAGE CHARACTERISTIC OF TRIANGULAR BARRIER SEMICONDUCTOR STRUCTURES
BUOT, FA
KRUMHANSL, JA
SOCHA, JB
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (09) : 814 - 816
[2] COOK RK, 1982, NOV NUM SIM VLSI DEV
[3] HESS K, 1980, PHYSICS NONLINEAR TR, P10
[4] CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES
KAZARINOV, RF
LURYI, S
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 810 - 812
[5] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
MALIK, RJ
AUCOIN, TR
ROSS, RL
BOARD, K
WOOD, CEC
EASTMAN, LF
[J]. ELECTRONICS LETTERS, 1980, 16 (22) : 836 - 837
[6] STRATTON R, 1962, PHYS REV, V126, P814