TEMPERATURE-DEPENDENT BARRIER HEIGHTS IN BULK UNIPOLAR DIODES LEADING TO IMPROVED TEMPERATURE STABLE PERFORMANCE

被引：9

作者：

KEARNEY, MJ ^{[1
]}

KELLY, MJ ^{[1
]}

CONDIE, A ^{[1
]}

DALE, I ^{[1
]}

机构：

[1] MARCONI ELECTR DEVICES LTD,LINCOLN IND ESTATE,LINCOLN LN6 3LF,ENGLAND

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 10期

关键词：

Diodes; Semiconductor devices and materials;

D O I：

10.1049/el:19900439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface states in a Schottky diode lead to a pinning of the Fermi level and a negative temperature coefficient for the barrier height. Calculations show that the barrier height of a epitaxially grown, bulk, unipolar diode actually increases with temperature, typically by about 0.4meVK-1 for GaAs between −40°C and +80°C. This novel effect can be used to explain the improved temperature stability of devices employing these diodes as direct retrofit replacements for conventional Schottky diodes. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：671 / 672

页数：2

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