THE TEMPERATURE-DEPENDENCE OF THE BARRIER HEIGHT IN AMORPHOUS-SILICON SCHOTTKY BARRIERS

被引：7

作者：

BAPAT, DR ^{[1
]}

NARASIMHAN, KL ^{[1
]}

KUCHIBHOTLA, R ^{[1
]}

机构：

[1] INDIAN INST TECHNOL, DEPT PHYS, BOMBAY 400076, INDIA

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1987年 / 56卷 / 01期

关键词：

D O I：

10.1080/13642818708211225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：71 / 78

页数：8

共 12 条

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