EFFECT OF HEAT-TREATMENT ON PALLADIUM AMORPHOUS-SILICON SCHOTTKY BARRIERS

被引：6

作者：

PIETRUSZKO, SM ^{[1
]}

NARASIMHAN, KL ^{[1
]}

GUHA, S ^{[1
]}

机构：

[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571488

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：801 / 803

页数：3

相关论文

共 13 条

[1] BAPAT DR, UNPUB
[2] MIS-SCHOTTKY THEORY UNDER CONDITIONS OF OPTICAL CARRIER GENERATION IN SOLAR-CELLS
CARD, HC
YANG, ES
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 51 - 53
[3] ON LIGHT-INDUCED EFFECT IN AMORPHOUS HYDROGENATED SILICON
GUHA, S
NARASIMHAN, KL
PIETRUSZKO, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 859 - 860
[4] FIELD-EFFECT MEASUREMENT ON THE FILM-SUBSTRATE AND FILM-VACUUM INTERFACES OF A-SI-H
GUHA, S
NARASIMHAN, KL
NAVKHANDEWALA, RV
PIETRUSZKO, SM
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 572 - 573
[5] GUHA S, 1980, B MATER SCI, V2, P317
[6] CURRENT TRANSPORT MECHANISM OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES
MISHIMA, Y
HIROSE, M
OSAKA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : 593 - 596
[7] OTTIAVANI G, 1979, J VAC SCI TECHNOL, V16, P1112
[8] Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[9] DOPED AMORPHOUS-SEMICONDUCTORS
SPEAR, WE
[J]. ADVANCES IN PHYSICS, 1977, 26 (06) : 811 - 845
[10] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI
STAEBLER, DL
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294