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TEMPERATURE-DEPENDENCE OF THE MOBILITY EDGE IN AMORPHOUS-SILICON

被引：16
作者：
PREMACHANDRAN, V
NARASIMHAN, KL
BAPAT, DR
机构：
来源：
PHYSICAL REVIEW B | 1984年 / 29卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.29.7073
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7073 / 7075
页数：3
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  • [10] INTERNAL PHOTOEMISSION IN HYDROGENATED AMORPHOUS-SI FILMS
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    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 96 - 98
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