ON THE MEASUREMENT OF BARRIER HEIGHT IN METAL-INSULATOR-SEMICONDUCTOR (GAAS) STRUCTURES BY INTERNAL PHOTOEMISSION TECHNIQUE

被引：2

作者：

ARORA, BM

SRIVASTAVA, AK

GUHA, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 03期

关键词：

D O I：

10.1063/1.330596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1820 / 1822

页数：3

共 15 条

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