PHOTO-VOLTAIC RESPONSE OF ALUMINA M-I-S SCHOTTKY STRUCTURES

被引：2

作者：

ROGER, JA

SOHEYLIAN, F

MOUHOUB, A

PIVOT, J

机构：

来源：

SOLAR ENERGY MATERIALS | 1980年 / 2卷 / 04期

关键词：

D O I：

10.1016/0165-1633(80)90039-8

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：447 / 459

页数：13

共 16 条

[1] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[2]

CHARLSON EJ, 1975, J APPL PHYS, V46, P3892

[3] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J].

COWLEY, AM .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3024-&

[4]

Fonash S. J., 1975, 11th IEEE Photovoltaic Specialists Conference, P376

[5] THEORY OF CAPACITANCE AND CONDUCTANCE BEHAVIOR OF SCHOTTKY-BARRIER AND CONDUCTING M-I-S DIODES WITH INTERFACE TRAPS [J].

FONASH, SJ .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3953-3958

[6] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J].

FONASH, SJ .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1286-1289

[7] OUTLINE AND COMPARISON OF POSSIBLE EFFECTS PRESENT IN A METAL-THIN-FILM-INSULATOR-SEMICONDUCTOR SOLAR-CELL [J].

FONASH, SJ .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3597-3602

[8]

FONASH SJ, 1976, MAY NSF ERDA WORKSH

[9] INFLUENCE OF KINETIC AND ELECTROSTATIC PROPERTIES OF INTERFACE STATES ON THE EFFICIENCY OF A MIS TUNNEL SOLAR-CELL [J].

PANANAKAKIS, G ;

KAMARINOS, G ;

VIKTOROVITCH, P .

REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (05) :639-647

[10]

PONPON JP, 1976, MAR INT C SOL EL TOU

← 1 2 →