THEORY OF CAPACITANCE AND CONDUCTANCE BEHAVIOR OF SCHOTTKY-BARRIER AND CONDUCTING M-I-S DIODES WITH INTERFACE TRAPS

被引：18

作者：

FONASH, SJ ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 09期

关键词：

D O I：

10.1063/1.324271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3953 / 3958

页数：6

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