PHOTOCONDUCTIVITY STUDIES OF THE MOBILITY EDGE IN AMORPHOUS-SILICON

被引：24

作者：

SPEAR, WE ^{[1
]}

ALANI, H ^{[1
]}

LECOMBER, PG ^{[1
]}

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1981年 / 43卷 / 05期

关键词：

D O I：

10.1080/01418638108222346

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：781 / 796

页数：16

共 18 条

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[2] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON
ANDERSON, DA
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712
[3] BEYER W, 1977, 7TH P INT C AM LIQ S, P328
[4] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS
DAVIS, EA
MOTT, NF
[J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (179): : 903 - &
[5] TEMPERATURE-VARIATION OF MOBILITY GAP IN NONPOLAR AMORPHOUS-SEMICONDUCTORS
GRIFFITH, RW
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1977, 24 (03) : 413 - 426
[6] THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON
JONES, DI
COMBER, PGL
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 541 - 551
[7] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X
[8] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS
LECOMBER, PG
SPEAR, WE
[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (08) : 509 - &
[9] Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5
[10] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE
MADAN, A
LECOMBER, PG
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257