ASYMMETRIC PLANAR DOPED BARRIER DIODES FOR MIXER AND DETECTOR APPLICATIONS

被引：15

作者：

KEARNEY, MJ ^{[1
]}

KELLY, MJ ^{[1
]}

DAVIES, RA ^{[1
]}

KERR, TM ^{[1
]}

REES, PK ^{[1
]}

CONDIE, A ^{[1
]}

DALE, I ^{[1
]}

机构：

[1] MARCONI ELECTR DEVICES LTD,LINCOLN LN6 3LF,ENGLAND

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 21期

关键词：

D O I：

10.1049/el:19890971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1454 / 1456

页数：3

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[1] DALE I, 1989, 19TH P EUR MICR C
[2] DALE I, 1989, IEEE MTTS INT MICROW, V1, P467
[3] TESTING MODELS OF I/V CHARACTERISTICS OF PLANAR-DOPED BARRIER DIODES
KEARNEY, MJ
KERR, TM
KELLY, MJ
CONDIE, A
DALE, I
[J]. ELECTRONICS LETTERS, 1989, 25 (17) : 1145 - 1147
[4] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
MALIK, RJ
AUCOIN, TR
ROSS, RL
BOARD, K
WOOD, CEC
EASTMAN, LF
[J]. ELECTRONICS LETTERS, 1980, 16 (22) : 836 - 837
[5] SPILL-OVER EFFECTS IN PLANAR DOPED BARRIER DEVICES
SHUR, M
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 869 - 871