Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy

Deep-level transient spectroscopy measurements were performed in order to investigate the,effects of substrate growth temperature and dopant species on deep levels in Si layers, during low-temperature molecular beam epitaxial growth. The structures studied were n(+)-p junctions using B doping for the p layer and p(+)-n junctions using P doping for the n layer. While the density of hole traps H1 (0.38-0.41 eV) in the B-doped p layers showed a clear increase with decreasing growth temperature from 600 to 370degreesC, the electron trap density was relatively constant. Interestingly, the minority carrier electron traps E1(0.42-0.45 eV),and E2 (0.257 eV), found in the B-doped p layers, are similar to the majority carrier electron traps E11 (0.48 eV) and E22 (0.269 eV) observed in P-doped n layers grown at 600degreesC. It is hypothesized that these dominating election traps are associated with pure divacancy defects and are independent of the dopant species. (C) 2003 American Institute of Physics.