Chemical synthesis of β-In2S3 powder and its optical characterization

被引:52
作者
Gorai, S [1 ]
Guha, P [1 ]
Ganguli, D [1 ]
Chaudhuri, S [1 ]
机构
[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, W Bengal, India
关键词
beta-In2S3; wet chemical synthesis; X-ray diffraction; optical property;
D O I
10.1016/j.matchemphys.2003.08.013
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
beta-In2S3 in powder form was chemically synthesized using InCl3 and thioacetamide as precursors followed by annealing in argon atmosphere in the temperature range 573-1123 K. The composition of the powder was determined by XRF. X-ray diffractornetry showed the beta-In2S3 phase to retain a tetragonal structure throughout the range of annealing temperature. Microstructural investigation with scanning electron microscopy indicated the particle size to vary from 0.40 to 1.48 mum. Optical band gap of the powder was determined from the reflectance studies as a function of wavelength and was found to be similar to2.12 eV. Photoluminescence studies indicated a strong peak around 2.08 eV for all the samples annealed (argon) in the range similar to573-1123 K. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:974 / 979
页数:6
相关论文
共 21 条
[1]   PRIMARY SOLID-STATE BATTERIES CONSTRUCTED FROM COPPER AND INDIUM SULFIDES [J].
DALAS, E ;
KOBOTIATIS, L .
JOURNAL OF MATERIALS SCIENCE, 1993, 28 (24) :6595-6597
[2]   AQUEOUS PRECIPITATION AND ELECTRICAL-PROPERTIES OF IN2S3 - CHARACTERIZATION OF THE IN2S3 POLYANILINE AND IN2S3 POLYPYRROLE HETEROJUNCTIONS [J].
DALAS, E ;
SAKKOPOULOS, S ;
VITORATOS, E ;
MAROULIS, G ;
KOBOTIATIS, L .
JOURNAL OF MATERIALS SCIENCE, 1993, 28 (20) :5456-5460
[3]   VAPOR GROWTH OF 3 IN2S3 MODIFICATIONS BY IODINE TRANSPORT [J].
DIEHL, R ;
NITSCHE, R .
JOURNAL OF CRYSTAL GROWTH, 1975, 28 (03) :306-310
[4]   CHARACTERIZATION OF IN2SN3 FILMS OBTAINED BY SLURRY PAINTING [J].
HERRASTI, P ;
FATAS, E .
JOURNAL OF MATERIALS SCIENCE, 1990, 25 (08) :3535-3540
[5]   NORMAL-TYPE IN2S3 THIN-FILMS PREPARED BY GAS CHALCOGENIZATION OF METALLIC ELECTROPLATED INDIUM - PHOTOELECTROCHEMICAL CHARACTERIZATION [J].
HERRERO, J ;
ORTEGA, J .
SOLAR ENERGY MATERIALS, 1988, 17 (05) :357-368
[6]  
*JCPDS, 250390 JCPDS
[7]   OPTICAL-ENERGY GAPS OF BETA-IN2S3 THIN-FILMS GROWN BY SPRAY PYROLYSIS [J].
KIM, WT ;
KIM, CD .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2631-2633
[8]  
KITAEV GA, 1976, IAN SSSR NEORG MATER, V12, P1760
[9]   Chemical bath deposition of indium sulphide thin films: preparation and characterization [J].
Lokhande, CD ;
Ennaoui, A ;
Patil, PS ;
Giersig, M ;
Diesner, K ;
Muller, M ;
Tributsch, H .
THIN SOLID FILMS, 1999, 340 (1-2) :18-23
[10]   In2S3 nanocolloids with excitonic emission:: In2S3 vs CdS comparative study of optical and structural characteristics [J].
Nagesha, DK ;
Liang, XR ;
Mamedov, AA ;
Gainer, G ;
Eastman, MA ;
Giersig, M ;
Song, JJ ;
Ni, T ;
Kotov, NA .
JOURNAL OF PHYSICAL CHEMISTRY B, 2001, 105 (31) :7490-7498