Synthesis and surface engineering of complex nanostructures by atomic layer deposition

被引：756

作者：

Knez, Mato

Niesch, Kornelius

Niinistoe, Lauri

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[2] Univ Hamburg, Inst Phys Appl, D-20335 Hamburg, Germany

[3] Aalto Univ, Inorgan & Analyt Chem Lab, Helsinki 02015, Finland

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 21期

关键词：

D O I：

10.1002/adma.200700079

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Atomic layer deposition (ALD) has recently become the method of choice for the semiconductor industry to conformally process extremely thin insulating layers (high-k oxides) onto large-area silicon substrates. ALD is also a key technology for the surface modification of complex nanostructured materials. After briefly introducing ALD, this Review will focus on the various aspects of nanomaterials and their processing by ALD, including nanopores, nanowires and -tubes, nanopatterning and nanolaminates as well as low-temperature ALD for organic nanostructures and biomaterials. Finally, selected examples will be given of device applications, illustrating recent innovative approaches of how ALD can be used in nanotechnology.

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页码：3425 / 3438

页数：14

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