Atomic-scale quantitative elemental analysis of boundary layers in a SrTiO3 ceramic condenser by high-angle annular dark-field electron microscopy

被引：29

作者：

Kawasaki, M ^{[1
]}

Yamazaki, T

Sato, S

Watanabe, K

Shiojiri, M

机构：

[1] JEOL Ltd, Electron Opt Div, Tokyo 1968558, Japan

[2] Tokyo Univ Sci, Dept Phys, Tokyo 1628601, Japan

[3] TDK Co, Ctr Mat Res, Narita 2868588, Japan

[4] Tokyo Metropolitan Coll Technol, Tokyo 1400011, Japan

[5] Kanazawa Med Univ, Dept Anat, Kanazawa, Ishikawa 9200293, Japan

[6] Kyoto Inst Technol, Kyoto 6068585, Japan

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 2001年 / 81卷 / 01期

关键词：

D O I：

10.1080/01418610108216630

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic-resolution high-angle annular dark-field (HAADF) scanning transmission electron microscopy was quantitatively performed for a boundary layer semiconducting SrTiO3 ceramic condenser which has a Bi diffusion layer near the boundary in each grain. With the aid of HAADF image simulation it was found that the Sr sites in the diffusion later are replaced by Bi atoms with a concentration of 14 at.%. In a few lattice layers near the edge of the grain, the Bi concentration abruptly increased. The Bi concentration of every Sr or Ti(O) column, along the [001] incident electron beam, was estimated from the simulation taking account of the lattice distortion, which was caused as a result of the substitution of Bi atoms, giving a high ratio of Bi to Sr and Ti atoms. It is also concluded that the simulation is indispensable for HAADF microscopy analysis of a crystal with distorted lattice.

引用

页码：245 / 260

页数：16

共 19 条

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