Charge carrier dynamics in nanoporous photoelectrodes

被引：73

作者：

Kelly, JJ ^{[1
]}

Vanmaekelbergh, D ^{[1
]}

机构：

[1] Univ Utrecht, Debye Inst, NL-3508 TA Utrecht, Netherlands

来源：

ELECTROCHIMICA ACTA | 1998年 / 43卷 / 19-20期

关键词：

electron transport; gallium phosphide; quantum efficiency; silicon carbide; titanium dioxide;

D O I：

10.1016/S0013-4686(98)00018-8

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Some recent results obtained in our group on nanoporous semiconductors are reviewed. Both particulate (TiO2) and crystalline (GaP, SiC) layers are considered. Typical structural dimensions are in the 15-150 nm range. These electrodes show greatly enhanced efficiencies for conversion of light to photocurrent. In addition, majority carrier transport in such systems is surprisingly slow. The factors determining charge carrier dynamics in nanoporous semiconductor photoelectrodes are discussed. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：2773 / 2780

页数：8

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