Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy

被引：44

作者：

Zhi, D ^{[1
]}

Davock, H

Murray, R

Roberts, C

Jones, TS

Pashley, DW

Goodhew, PJ

Joyce, BA

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Ctr Elect Mat & Devices, London SW7 2AY, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England

[3] Univ Liverpool, Dept Mat Sci & Engn, Liverpool L69 3GH, Merseyside, England

[4] Univ London Imperial Coll Sci Technol & Med, Ctr Elect Mat & Devices, London SW7 2BZ, England

[5] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Dept Phys, London SW7 2BZ, England

[6] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 04期

关键词：

D O I：

10.1063/1.1337921

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a quantitative technique for the direct compositional analysis of quantum dots (QDs), in which scanning transmission electron microscopy is applied to a capped InAs/GaAs QD layer in a structure also containing InxGa1-xAs/GaAs quantum well (QW) layers to provide an internal calibration of the In content. By obtaining energy dispersive x-ray analysis line scans through both QWs and QDs, the composition of the QDs can be determined by reference to the known composition of the QWs. In this article the method is described and demonstrated using two InAs/GaAs structures in which the QDs are nominally identical, but with different In composition in the calibration QW layers. We find that the QDs in both structures have an In composition of 65%-67% and the associated wetting layers contain approximately 12% In. (C) 2001 American Institute of Physics.

引用

页码：2079 / 2083

页数：5

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