Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals

This article presents transient numerical simulations of heat transfer during sublimation growth of SIC single crystals via physical vapor transport (also called the modified Lely method), investigating the respective influence of radiative and convective contributions and of the semi-transparency of the growing crystal. For radiative heat transfer. we use the net radiation model. Semi-transparency is included via the band approximation model. We briefly describe the corresponding numerical methods. A complete documentation of the material data used is included. (C) 2001 Elsevier Science B.V. All rights reserved.