Low resistance spin-dependent tunneling junctions with naturally oxidized tunneling barrier

被引：12

作者：

Sin, K ^{[1
]}

Mao, M

Chien, C

Funada, S

Miloslavsky, L

Tong, HC

Gupta, S

机构：

[1] Read Rite Corp, Fremont, CA 94539 USA

[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

[3] Veeco, Orangeburg, NY 10962 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2000年 / 36卷 / 05期

关键词：

giant magnetoresistance; magnetic films and devices; magnetic materials for heads; magnetic spin tunneling;

D O I：

10.1109/20.908599

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the effect of aluminum thickness on RA (resistance . area product) and MR ratio in spin-dependent tunnel junctions. Very low RA values below 40 Omega mum(2) and a maximum MR ratio of 6% were obtained in Ni18Fe19/Al2O3/Ni81Fe19 tunneling junctions fabricated using natural oxidation of aluminum. The MR ratio significantly increased with use of Co90Fe10 electrodes. Using natural oxidation of 6 Angstrom aluminum, RA and MR ratio of these junctions are similar to 50 Omega mum(2) and similar to 28%, respectively, The MR ratio and the junction resistance strongly depend on the aluminum thickness. The optimum thickness of aluminum is 6-7 Angstrom for natural oxidation.

引用

页码：2818 / 2820

页数：3

共 9 条

[1] Spin-dependent tunneling junctions with hard magnetic layer pinning [J].