Urea sensor based on tin oxide thin films prepared by modified plasma enhanced CVD

被引:54
作者
Ansari, S. G. [1 ]
Ansari, Z. A. [3 ]
Seo, Hyung-Kee [1 ]
Kim, Gil-Sung [1 ]
Kim, Young-Soon [1 ]
Khang, Gilson [2 ]
Shin, Hyung-Shik [1 ]
机构
[1] Chonbuk Natl Univ, Sch Chem Engn, Jeonju 561756, Jeonbuk, South Korea
[2] Chonbuk Natl Univ, Dept Polymer Nanosci & Technol, Jeonju 561756, Jeonbuk, South Korea
[3] Jamia Millia Islamia, Ctr Interdisciplinary Res Basic Sci, New Delhi 110025, India
来源
SENSORS AND ACTUATORS B-CHEMICAL | 2008年 / 132卷 / 01期
关键词
tin oxide; chemical vapor deposition (CVD); plasma processing and deposition; enzyme immobilization; urea sensor; surface composition;
D O I
10.1016/j.snb.2008.01.036
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Urea sensing properties of tin oxide thin films are presented here. Tin oxide thin films were deposited by modified plasma enhanced chemical vapor deposition (CVD) technique at the deposition temperatures of 500-800 degrees C and RF power of 100W. Film morphology significantly changed with deposition temperature from flakes to tiny crystals having tetragonal rutile structure grown along the [110] direction. Urease was covalently attached with tin oxide (by soaking in urease solution for 3 h). In general, conductivity of film increases after urease immobilization. The urease immobilized films were found sensitive to urea concentration from 1 to 100 mM. Three different sensitivity regions are observed viz. (i) lower concentrations (below 10 mM); (ii) linear region up to 50 mM and (iii) a saturation region above 50 mM. Sensors are extremely sensitive in region (i). Films deposited at higher temperature resulted in increased urea sensitivity. From the elemental analyses of the films after urease immobilization, urease was found attached with tin oxide, as evident by N 1s peak in the photoelectron spectra. A possible sensing mechanism is presented and discussed. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:265 / 271
页数:7
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