Molecular beam epitaxy growth kinetics for group III nitrides

被引：9

作者：

Foxon, CT

Cheng, TS

Hooper, SE

Jenkins, LC

Orton, JW

Lacklison, DE

Novikov, SV

Popova, TB

Tretyakov, VV

机构：

[1] UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,NOTTINGHAM NG7 2RD,ENGLAND

[2] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.588857

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used a modified molecular beam epitaxy method, in which the active species of nitrogen is derived from an Oxford applied research rf activated plasma source, to grow AlN, GaN, InN, Al(AsN) and Ga(AsN). In this paper we discuss, for the first time, the growth kinetics of both binary nitrides and ''ternary alloys'' in the light of both our observations and those of other groups working in this area and their relevance to the properties of films grown under various conditions. (C) 1996 American Vacuum Society.

引用

页码：2346 / 2348

页数：3

共 12 条

[1] Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy
Cheng, TS
Foxon, CT
Jenkins, LC
Hooper, SE
Orton, JW
Novikov, SV
Popova, TB
Tretyakov, VV
[J]. JOURNAL OF CRYSTAL GROWTH, 1996, 158 (04) : 399 - 402
[2] COMPOSITION EFFECTS IN THE GROWTH OF GA(IN)ASYP1-Y ALLOYS BY MBE
FOXON, CT
JOYCE, BA
NORRIS, MT
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (01) : 132 - 140
[3] THE GROWTH AND PROPERTIES OF GROUP-III NITRIDES
FOXON, CT
CHENG, TS
NOVIKOV, SV
LACKLISON, DE
JENKINS, LC
JOHNSTON, D
ORTON, JW
HOOPER, SE
BABAALI, N
TANSLEY, TL
TRETYAKOV, VV
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 892 - 896
[4] EVALUATION OF A NEW PLASMA SOURCE FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF INN AND GAN FILMS
HOKE, WE
LEMONIAS, PJ
WEIR, DG
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 1024 - 1028
[5] SOME ASPECTS OF GAN GROWTH ON GAAS(100) SUBSTRATES USING MOLECULAR-BEAM EPITAXY WITH AN RF ACTIVATED NITROGEN-PLASMA SOURCE
HOOPER, SE
FOXON, CT
CHENG, TS
JENKINS, LC
LACKLISON, DE
ORTON, JW
BESTWICK, T
KEAN, A
DAWSON, M
DUGGAN, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 155 (3-4) : 157 - 163
[6] INSITU CONTROL OF AS COMPOSITION IN INASP AND INGAASP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
HOU, HQ
TU, CW
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (15) : 1872 - 1874
[7] EQUILIBRIUM PRESSURE OF N-2 OVER GAN AND HIGH-PRESSURE SOLUTION GROWTH OF GAN
KARPINSKI, J
JUN, J
POROWSKI, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) : 1 - 10
[8] GROWTH OF ZINC BLENDE-GAN ON BETA-SIC COATED (001) SI BY MOLECULAR-BEAM EPITAXY USING A RADIO-FREQUENCY PLASMA DISCHARGE, NITROGEN FREE-RADICAL SOURCE
LIU, H
FRENKEL, AC
KIM, JG
PARK, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (10) : 6124 - 6127
[9] THE GROWTH AND PROPERTIES OF MIXED GROUP-V NITRIDES
ORTON, JW
LACKLISON, DE
BABAALI, N
FOXON, CT
CHENG, TS
NOVIKOV, SV
JOHNSTON, DFC
HOOPER, SE
JENKINS, LC
CHALLIS, LJ
TANSLEY, TL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) : 263 - 268
[10] GAN, AIN, AND INN - A REVIEW
STRITE, S
MORKOC, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1237 - 1266

← 1 2 →