Electrical characterisation of phosphorus-doped ZnO thin films grown by pulsed laser deposition

被引：20

作者：

Doggett, B. ^{[1
]}

Chakrabarti, S. ^{[1
]}

O'Haire, R. ^{[1
]}

Meaney, A. ^{[1
]}

McGlynn, E. ^{[1
]}

Henry, M. O. ^{[1
]}

Mosnier, J. P. ^{[1
]}

机构：

[1] Dublin City Univ, Natl Ctr Plasma Sci & Technol, Sch Phys Sci, Dublin 9, Ireland

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2007年 / 42卷 / 1-6期

基金：

爱尔兰科学基金会;

关键词：

ZnO; phosphorus-doped ZnO; p-type doping ZnO; pulsed laser deposition; hall effect;

D O I：

10.1016/j.spmi.2007.04.028

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Phosphorus-doped ZnO films were grown by pulsed laser deposition using a ZnO:P2O5-doped target as the phosphorus source with the aim of producing p-type ZnO material. ZnO:P layers (with phosphorus concentrations of between 0.01 to 1 wt%) were grown on a pure ZnO buffer layer. The electrical properties of the films were characterised from temperature dependent Hall-effect measurements. The samples typically showed weak n-type conduction in the dark, with a resistivity of 70 Omega cm, a Hall mobility of mu(n) similar to 0.5 cm(2) V-1 s(-1) and a carrier concentration of n similar to 3 x 10(17) cm(-3) at room temperature. After exposure to an incandescent light source, the samples underwent a change in conduction from n- to p-type, with an increase in mobility and decrease in concentration for temperatures below 300 K. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：74 / 78

页数：5

共 12 条

[1] Formation of p-type ZnO film on InP substrate by phosphor doping [J].

Bang, KH ;

Hwang, DK ;

Park, MC ;

Ko, YD ;

Yun, I ;

Myoung, JM .

APPLIED SURFACE SCIENCE, 2003, 210 (3-4) :177-182

[2] Persistent n-type photoconductivity in p-type ZnO [J].

Claflin, B ;

Look, DC ;

Park, SJ ;

Cantwell, G .

JOURNAL OF CRYSTAL GROWTH, 2006, 287 (01) :16-22

[3]

COLLINS RJ, 1958, PHYS REV, V112

[4] STABILITY OF ZNO PARTICLES IN AQUEOUS SUSPENSIONS UNDER UV ILLUMINATION [J].

DOMENECH, J ;

PRIETO, A .

JOURNAL OF PHYSICAL CHEMISTRY, 1986, 90 (06) :1123-1126

[5] Shallow donor formation in phosphorus-doped ZnO thin films [J].

Heo, YW ;

Ip, K ;

Park, SJ ;

Pearton, SJ ;

Norton, DP .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 78 (01) :53-57

[6] ZINC-OXIDE - AN OUTSTANDING EXAMPLE OF A BINARY COMPOUND SEMICONDUCTOR [J].

HIRSCHWALD, WH .

ACCOUNTS OF CHEMICAL RESEARCH, 1985, 18 (08) :228-234

[7]

LI YL, 2005, INST SOC OPTICAL ENG

[8] Electrical and optical properties of p-type ZnO [J].

Look, DC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) :S55-S61

[9] A comprehensive review of ZnO materials and devices -: art. no. 041301 [J].

Ozgür, U ;

Alivov, YI ;

Liu, C ;

Teke, A ;

Reshchikov, MA ;

Dogan, S ;

Avrutin, V ;

Cho, SJ ;

Morkoç, H .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (04) :1-103

[10] Effects of an electrically conducting layer at the zinc oxide surface [J].

Schmidt, O ;

Kiesel, P ;

Van de Walle, CG ;

Johnson, NM ;

Nause, J ;

Döhler, GH .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10) :7271-7274

← 1 2 →