Growth rate of silicon nanowires

被引：118

作者：

Kikkawa, J ^{[1
]}

Ohno, Y ^{[1
]}

Takeda, S ^{[1
]}

机构：

[1] Osaka Univ, Dept Phys, Grad Sch Sci, Osaka 5600043, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 12期

关键词：

D O I：

10.1063/1.1888034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the growth rate of silicon nanowires (SiNWs), which were grown at temperatures between 365 and 495 degrees C via the vapor-liquid-solid (VLS) mechanism. We grew SiNWs using gold as catalysts and monosilane (SiH4) as a vapor phase reactant. Observing SiNWs by means of transmission electron microscopy, we have found that SiNWs with smaller diameters grow slower than those with larger ones, and the critical diameter at which growth stops completely exists. We have estimated the critical diameter of SiNWs to be about 2 nm. We have also measured the temperature dependence of the growth rate of SiNWs and estimated the activation energy of the growth of SiNWs to be 230 kJ/mol. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 18 条

[1] QUANTITATIVE STUDY ON GROWTH OF SILICON WHISKERS FROM SILANE AND GERMANIUM WHISKERS FROM GERMANE [J].

BOOTSMA, GA ;

GASSEN, HJ .

JOURNAL OF CRYSTAL GROWTH, 1971, 10 (03) :223-&

[2] Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].

Cui, Y ;

Lieber, CM .

SCIENCE, 2001, 291 (5505) :851-853

[3] Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species [J].

Cui, Y ;

Wei, QQ ;

Park, HK ;

Lieber, CM .

SCIENCE, 2001, 293 (5533) :1289-1292

[4] Directed growth of nickel silicide nanowires [J].

Decker, CA ;

Solanki, R ;

Freeouf, JL ;

Carruthers, JR ;

Evans, DR .

APPLIED PHYSICS LETTERS, 2004, 84 (08) :1389-1391

[5] REACTIVITY OF INTERMETALLIC THIN-FILMS FORMED BY THE SURFACE MEDIATED DECOMPOSITION OF MAIN GROUP ORGANOMETALLIC COMPOUNDS [J].

DUBOIS, LH ;

NUZZO, RG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :441-445

[6] FUNDAMENTAL ASPECTS OF VLS GROWTH [J].

GIVARGIZOV, EI .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :20-30

[7] Growth characteristics of silicon nanowires synthesized by vapor-liquid-solid growth in nanoporous alumina templates [J].

Lew, KK ;

Redwing, JM .

JOURNAL OF CRYSTAL GROWTH, 2003, 254 (1-2) :14-22

[8] SILANE PYROLYSIS RATES FOR THE MODELING OF CHEMICAL VAPOR-DEPOSITION [J].

MEYERSON, BS ;

JASINSKI, JM .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :785-787

[9]

Onischuk AA, 1998, INT J CHEM KINET, V30, P99, DOI 10.1002/(SICI)1097-4601(1998)30:2<99::AID-KIN1>3.0.CO

[10]

2-O

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