Low-voltage organic thin-film transistors with high-k nanocomposite gate dielectrics for flexible electronics and optothermal sensors

被引：174

作者：

Zirkl, Martin

Haase, Anja

Fian, Alex

Schon, Helmut

Sommer, Christian

Jakopic, Georg

Leising, Giinther

Stadlober, Barbara

Graz, Ingrid

Gaar, Norbert

Schwodiauer, Reinhard

Bauer-Gogonea, Simona

Bauer, Siegfried

机构：

[1] Joanneum Res, Inst Nanostruct Mats & Photon, A-8160 Weiz, Austria

[2] Johannes Kepler Univ Linz, Soft Matter Phys, A-4040 Linz, Austria

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 17期

关键词：

D O I：

10.1002/adma.200700831

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic field effect transistors with a nanocomposite gate of ZrO2 and poly(alpha-methyl styrene) (see figure, left) show performances close to the theoretically possible limit, with interface trap densities comparing favorably with the current state of the art in silicon microelectronics. They are not only key elements in flexible electronics, but also in low-cost, high-end sensors, as demonstrated with optothermal sensing elements (see figure, right).

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页码：2241 / +

页数：6

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