Covalently bound hole-injecting nanostructures. Systematics of molecular architecture, thickness, saturation, and electron-blocking characteristics on organic light-emitting diode luminance, turn-on voltage, and quantum efficiency

被引:155
作者
Huang, QL
Evmenenko, GA
Dutta, P
Lee, P
Armstrong, NR
Marks, TJ [1 ]
机构
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
[3] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[4] Univ Arizona, Dept Chem, Tucson, AZ 85721 USA
[5] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA
关键词
D O I
10.1021/ja051077w
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Hole transporting materials are widely used in multilayer organic and polymer light-emitting diodes (OLEDs, PLEDs, respectively) and are indispensable if device electroluminescent response and durability are to be truly optimized. This contribution analyzes the relative effects of tin-doped indium oxide (ITO) anode-hole transporting layer (HTL) contact versus the intrinsic HTL materials properties on OLED performance. Two siloxane-based HTL materials, N,N'-bis(p-trichlorosilylpropyl)-naphthalen-1-yl)-N,N'-diphenyl-biphenyl-4,4'-diamine (NPB-Si-2) and 4,4'-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPD-Si-2), are designed and synthesized. They have the same hole transporting triarylamine cores as conventional HTL materials such as 1,4-bis(1-naphthylphenylamino)biphenyl (NPB) and N,N-diphenyl-N,N-bis(3-methylphenyl)-1,1-biphenyl)-4,4-diamine (TPD), respectively. However, they covalently bind to the ITO anode, forming anode-HTL contacts that are intrinsically different from those of the anode to TPD and NPB. Applied to archetypical tris(8-hydroxyquinolato)aluminum(III) (Alq)-based OLEDs as (1) the sole HTLs or (2) anode-NPB HTL interlayers, NPB-Si2 and TPD-Si2 enhance device electroluminescent response significantly versus comparable devices based on NPB alone. In the first case, OLEDs with 36 000 cd/m(2) luminance, 1.6% forward external quantum efficiency (eta(ext)), and 5 V turn-on voltages are achieved, affording a 250% increase in luminance and similar to 50% reduction in turn-on voltage, as compared to NPB-based devices. In the second case, even more dramatic enhancement is observed (64000 cd/m(2) luminance; 2.3% eta(ext); turn-on voltages as low as 3.5 V). The importance of the anode-HTL material contact is further explored by replacing NPB with saturated hydrocarbon siloxane monolayers that covalently bind to the anode, without sacrificing device performance (30000 cd/m(2) luminance; 2.0% eta(ext); 4.0 V turn-on voltage). These results suggest new strategies for developing OLED hole transporting structures.
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收藏
页码:10227 / 10242
页数:16
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