Noncontact characterization of CdTe doped with V or Ti

被引：4

作者：

Eiche, C

Joerger, W

Schwarz, R

Benz, KW

机构：

[1] Kristallographisches Institut, University of Freiburg, D-79104 Freiburg

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 161卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00669-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Time dependent charge measurements (TDCM) are used for noncontact characterization of CdTe crystals doped with vanadium or titanium. Several extensions of the basic technique are presented, which allow for the investigation of the thermal activation energy of the charge carriers, the photosensitivity and the surface photovoltage (SPV). Results of noncontact DLTS measurements show that the formation of defects can change suddenly during the crystal growth process.

引用

页码：271 / 276

页数：6

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