High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas

被引：39

作者：

Bae, JW ^{[1
]}

Jeong, CH

Kim, HK

Kim, KK

Cho, NG

Seong, TY

Park, SJ

Adesida, I

Yeom, GY

机构：

[1] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[2] Sungkyunkwan Univ, Dept Mat Sci & Engn, Suwon 440746, South Korea

[3] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 5B期

关键词：

AZO; BCl3; inductively coupled plasma; bias voltage; etch profile;

D O I：

10.1143/JJAP.42.L535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using BCl3/CH4/H-2 plasma chemistry. Etch rates were measured as a function of BCl3 flow rate in BCl3/CH4/H-2 mixture and dc-bias voltage. Measurement of etch rate, and etched sidewall profile were performed using a stylus profilometer and scanning electron microscopy, respectively. The highest AZO etch rate about 3 10 nm/min, could be obtained near 80% BCl3 and at dc-bias voltage of -350 V.

引用

页码：L535 / L537

页数：3

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