Window layer development for microcrystalline silicon solar cells in n-i-p configuration

被引：20

作者：

Boettler, Wanjiao ^{[1
]}

Smirnov, Vladimir ^{[1
]}

Lambertz, Andreas ^{[1
]}

Huepkes, Juergen ^{[1
]}

Finger, Friedhelm ^{[1
]}

机构：

[1] Forschungszentrum Julich, IEF Photovolta 5, D-52425 Julich, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4 | 2010年 / 7卷 / 3-4期

关键词：

TRANSITION; TRANSPORT;

D O I：

10.1002/pssc.200982833

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of p-type and front ZnO layers, being window layers in n-i-p solar cells, is considered in this work. Electrical and optical properties of these layers were investigated on glass substrates, subject to thickness and doping variations. Subsequently, the effects of p-layer thickness and doping and front ZnO thickness on solar cell performance were studied. The optimal conditions for concerned layers are obtained, and discussed in terms of the built-in voltage, potential barriers and total reflection. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1069 / 1072

页数：4

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