Roles of microcrystalline silicon p layer as seed, window, and doping layers for microcrystalline silicon p-i-n solar cells

被引:24
作者
Fujibayashi, T [1 ]
Kondo, M
机构
[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan
[2] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan
关键词
D O I
10.1063/1.2173042
中图分类号
O59 [应用物理学];
学科分类号
摘要
The roles of the hydrogenated microcrystalline silicon (mu c-Si:H) p layer in the mu c-Si:H p-i-n solar cell fabricated by plasma-enhanced vapor deposition are determined through evaluation of the photovoltaic characteristics of solar cells fabricated by varying the deposition time of p layer. Mechanisms of p-layer growth are analyzed with in situ Auger electron spectroscopy and ex situ Raman scattering spectroscopy. Each successive regime of film growth including an amorphous silicon layer, an incubation layer containing crystalline silicon nuclei, and a layer filled with conical crystalline silicon grains that evolves in the p-layer process leads to diverse changes in the crystalline development of the subsequent mu c-Si:H i layer and in the characteristics of the solar cell. (c) 2006 American Institute of Physics.
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页数:4
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