INSITU SPECTROSCOPIC ELLIPSOMETRY INVESTIGATION OF THE NUCLEATION OF MICROCRYSTALLINE SILICON

被引：23

作者：

DREVILLON, B

GODET, C

KUMAR, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 23期

关键词：

D O I：

10.1063/1.97757

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1651 / 1653

页数：3

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[1] INSITU INVESTIGATION OF THE GROWTH OF RF GLOW-DISCHARGE DEPOSITED AMORPHOUS-GERMANIUM AND SILICON FILMS
ANTOINE, AM
DREVILLON, B
CABARROCAS, PRI
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2501 - 2508
[2] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV
ASPNES, DE
STUDNA, AA
[J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009
[3] AN ELLIPSOMETRY STUDY OF A HYDROGENATED AMORPHOUS-SILICON BASED N-I STRUCTURE
COLLINS, RW
CLARK, AH
GUHA, S
HUANG, CY
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4566 - 4571
[4] INSITU INVESTIGATION OF THE NUCLEATION OF MICROCRYSTALLINE SI
COLLINS, RW
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (13) : 843 - 845
[5] FAST POLARIZATION MODULATED ELLIPSOMETER USING A MICROPROCESSOR SYSTEM FOR DIGITAL FOURIER-ANALYSIS
DREVILLON, B
PERRIN, J
MARBOT, R
VIOLET, A
DALBY, JL
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1982, 53 (07) : 969 - 977
[6] TRANSFORMATION OF MICROCRYSTALLINE STATE OF HYDROGENATED SILICON TO AMORPHOUS ONE DUE TO PRESENCE OF MORE ELECTRONEGATIVE IMPURITIES
HIRAKI, A
FUKUSHIMA, Y
SATO, T
KIYONO, H
TERAUCHI, H
IMURA, T
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 791 - 794
[7] INSITU OBSERVATION OF POLYSILICON NUCLEATION AND GROWTH
HOTTIER, F
CADORET, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 304 - 312
[8] STRUCTURE CHANGE OF MICROCRYSTALLINE SILICON FILMS IN DEPOSITION PROCESS
IMURA, T
KAYA, H
TERAUCHI, H
KIYONO, H
HIRAKI, A
ICHIHARA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02): : 179 - 183
[9] INSITU SPECTROSCOPIC ELLIPSOMETRY STUDY OF THE GROWTH OF MICROCRYSTALLINE SILICON
KUMAR, S
DREVILLON, B
GODET, C
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) : 1542 - 1544
[10] GROWTH OF PLASMA-TRANSPORT MICROCRYSTALLINE SILICON AS STUDIED BY INSITU RAMAN-SPECTROSCOPY
RICHTER, H
LEY, L
[J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 247 - 251