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TRANSFORMATION OF MICROCRYSTALLINE STATE OF HYDROGENATED SILICON TO AMORPHOUS ONE DUE TO PRESENCE OF MORE ELECTRONEGATIVE IMPURITIES
被引:15
作者
:
HIRAKI, A
论文数:
0
引用数:
0
h-index:
0
HIRAKI, A
FUKUSHIMA, Y
论文数:
0
引用数:
0
h-index:
0
FUKUSHIMA, Y
SATO, T
论文数:
0
引用数:
0
h-index:
0
SATO, T
KIYONO, H
论文数:
0
引用数:
0
h-index:
0
KIYONO, H
TERAUCHI, H
论文数:
0
引用数:
0
h-index:
0
TERAUCHI, H
IMURA, T
论文数:
0
引用数:
0
h-index:
0
IMURA, T
机构
:
来源
:
JOURNAL OF NON-CRYSTALLINE SOLIDS
|
1983年
/ 59-6卷
/ DEC期
关键词
:
D O I
:
10.1016/0022-3093(83)90289-2
中图分类号
:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号
:
0805 ;
080502 ;
摘要
:
引用
收藏
页码:791 / 794
页数:4
相关论文
共 2 条
[1]
SI-H VIBRATIONAL PROPERTIES IN CRYSTALLIZED HYDROGENATED SILICON FABRICATED BY REACTIVE SPUTTERING IN H-2 ATMOSPHERE
HIRAKI, A
论文数:
0
引用数:
0
h-index:
0
HIRAKI, A
IMURA, T
论文数:
0
引用数:
0
h-index:
0
IMURA, T
MOGI, K
论文数:
0
引用数:
0
h-index:
0
MOGI, K
TASHIRO, M
论文数:
0
引用数:
0
h-index:
0
TASHIRO, M
[J].
JOURNAL DE PHYSIQUE,
1981,
42
(NC4):
: 277
-
280
[2]
HYDROGENATED CRYSTALLINE SILICON FABRICATED AT LOW-SUBSTRATE TEMPERATURES BY REACTIVE SPUTTERING IN HE-H2 ATMOSPHERE
IMURA, T
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
IMURA, T
MOGI, K
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
MOGI, K
HIRAKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
HIRAKI, A
NAKASHIMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
NAKASHIMA, S
MITSUISHI, A
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
MITSUISHI, A
[J].
SOLID STATE COMMUNICATIONS,
1981,
40
(02)
: 161
-
164
←
1
→
共 2 条
[1]
SI-H VIBRATIONAL PROPERTIES IN CRYSTALLIZED HYDROGENATED SILICON FABRICATED BY REACTIVE SPUTTERING IN H-2 ATMOSPHERE
HIRAKI, A
论文数:
0
引用数:
0
h-index:
0
HIRAKI, A
IMURA, T
论文数:
0
引用数:
0
h-index:
0
IMURA, T
MOGI, K
论文数:
0
引用数:
0
h-index:
0
MOGI, K
TASHIRO, M
论文数:
0
引用数:
0
h-index:
0
TASHIRO, M
[J].
JOURNAL DE PHYSIQUE,
1981,
42
(NC4):
: 277
-
280
[2]
HYDROGENATED CRYSTALLINE SILICON FABRICATED AT LOW-SUBSTRATE TEMPERATURES BY REACTIVE SPUTTERING IN HE-H2 ATMOSPHERE
IMURA, T
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
IMURA, T
MOGI, K
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
MOGI, K
HIRAKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
HIRAKI, A
NAKASHIMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
NAKASHIMA, S
MITSUISHI, A
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
MITSUISHI, A
[J].
SOLID STATE COMMUNICATIONS,
1981,
40
(02)
: 161
-
164
←
1
→