INSITU INVESTIGATION OF THE NUCLEATION OF MICROCRYSTALLINE SI

被引：16

作者：

COLLINS, RW

机构：

来源：

关键词：

D O I：

10.1063/1.96686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：843 / 845

页数：3

共 11 条

[1] Aspnes D. E., 1981, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V276, P188
[2] ASPNES DE, 1975, J OPT SOC AM, V64, P812
[3] AZZAM RMA, 1977, ELLIPSOMETRY POLARIZ, P332
[4] THE NUCLEATION AND GROWTH OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON
COLLINS, RW
PAWLOWSKI, A
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1160 - 1166
[5] AN ELLIPSOMETRY STUDY OF A HYDROGENATED AMORPHOUS-SILICON BASED N-I STRUCTURE
COLLINS, RW
CLARK, AH
GUHA, S
HUANG, CY
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4566 - 4571
[6] GROWTH OF HYDROGENATED AMORPHOUS-SILICON DUE TO CONTROLLED ION-BOMBARDMENT FROM A PURE SILANE PLASMA
DREVILLON, B
PERRIN, J
SIEFERT, JM
HUC, J
LLORET, A
DEROSNY, G
SCHMITT, JPM
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (09) : 801 - 803
[7] SURFACE-ANALYSIS DURING VAPOR-PHASE GROWTH
HOTTIER, F
THEETEN, JB
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 48 (04) : 644 - 654
[8] KUMAR S, UNPUB APPL PHYS LETT
[9] SUBSTRATE-TEMPERATURE DEPENDENCE OF MICROCRYSTALLINITY IN PLASMA-DEPOSITED, BORON-DOPED HYDROGENATED SILICON ALLOYS
RAJESWARAN, G
KAMPAS, FJ
VANIER, PE
SABATINI, RL
TAFTO, J
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1045 - 1047
[10] VEPRECK S, 1981, J PHYS C S10, V4, P251