Strain-induced polarization rotation in epitaxial (001) BiFeO3 thin films

被引：236

作者：

Jang, H. W. ^{[1
]}

Baek, S. H. ^{[1
]}

Ortiz, D. ^{[1
]}

Folkman, C. M. ^{[1
]}

Das, R. R. ^{[1
]}

Chu, Y. H. ^{[2
,3
]}

Shafer, P. ^{[2
,3
]}

Zhang, J. X. ^{[4
]}

Choudhury, S. ^{[4
]}

Vaithyanathan, V. ^{[4
]}

Chen, Y. B. ^{[5
]}

Felker, D. A. ^{[6
]}

Biegalski, M. D. ^{[7
]}

Rzchowski, M. S. ^{[6
]}

Pan, X. Q. ^{[5
]}

Schlom, D. G. ^{[8
]}

Chen, L. Q. ^{[4
]}

Ramesh, R. ^{[2
,3
]}

Eom, C. B. ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA

[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[5] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[6] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

[7] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[8] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.101.107602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Direct measurement of the remanent polarization of high quality (001)-oriented epitaxial BiFeO(3) thin films shows a strong strain dependence, even larger than conventional (001)-oriented PbTiO(3) films. Thermodynamic analysis reveals that a strain-induced polarization rotation mechanism is responsible for the large change in the out-of-plane polarization of (001) BiFeO(3) with biaxial strain while the spontaneous polarization itself remains almost constant.

引用

页数：4

共 19 条

[1] Enhancement of ferroelectricity in strained BaTiO3 thin films [J].

Choi, KJ ;

Biegalski, M ;

Li, YL ;

Sharan, A ;

Schubert, J ;

Uecker, R ;

Reiche, P ;

Chen, YB ;

Pan, XQ ;

Gopalan, V ;

Chen, LQ ;

Schlom, DG ;

Eom, CB .

SCIENCE, 2004, 306 (5698) :1005-1009

[2] Synthesis and ferroelectric properties of epitaxial BiFeO3 thin films grown by sputtering [J].

Das, R. R. ;

Kim, D. M. ;

Baek, S. H. ;

Eom, C. B. ;

Zavaliche, F. ;

Yang, S. Y. ;

Ramesh, R. ;

Chen, Y. B. ;

Pan, X. Q. ;

Ke, X. ;

Rzchowski, M. S. ;

Streiffer, S. K. .

APPLIED PHYSICS LETTERS, 2006, 88 (24)

[3] Effect of epitaxial strain on the spontaneous polarization of thin film ferroelectrics [J].

Ederer, C ;

Spaldin, NA .

PHYSICAL REVIEW LETTERS, 2005, 95 (25)

[4] Influence of strain and oxygen vacancies on the magnetoelectric properties of multiferroic bismuth ferrite [J].

Ederer, C ;

Spaldin, NA .

PHYSICAL REVIEW B, 2005, 71 (22)

[5] Direct structural determination in ultrathin ferroelectric films by analysis of synchrotron x-ray scattering measurements [J].

Fong, DD ;

Cionca, C ;

Yacoby, Y ;

Stephenson, GB ;

Eastman, JA ;

Fuoss, PH ;

Streiffer, SK ;

Thompson, C ;

Clarke, R ;

Pindak, R ;

Stern, EA .

PHYSICAL REVIEW B, 2005, 71 (14)

[6] Polarization rotation mechanism for ultrahigh electromechanical response in single-crystal piezoelectrics [J].

Fu, HX ;

Cohen, RE .

NATURE, 2000, 403 (6767) :281-283

[7] Room-temperature ferroelectricity in strained SrTiO3 [J].

Haeni, JH ;

Irvin, P ;

Chang, W ;

Uecker, R ;

Reiche, P ;

Li, YL ;

Choudhury, S ;

Tian, W ;

Hawley, ME ;

Craigo, B ;

Tagantsev, AK ;

Pan, XQ ;

Streiffer, SK ;

Chen, LQ ;

Kirchoefer, SW ;

Levy, J ;

Schlom, DG .

NATURE, 2004, 430 (7001) :758-761

[8] Epitaxial (001) BiFeO3 membranes with substantially reduced fatigue and leakage [J].

Jang, H. W. ;

Baek, S. H. ;

Ortiz, D. ;

Folkman, C. M. ;

Eom, C. B. ;

Chu, Y. H. ;

Shafer, P. ;

Ramesh, R. ;

Vaithyanathan, V. ;

Schlom, D. G. .

APPLIED PHYSICS LETTERS, 2008, 92 (06)

[9] Effect of epitaxial strain on ferroelectric polarization in multiferroic BiFeO3 films [J].

Kim, Dae Ho ;

Lee, Ho Nyung ;

Biegalski, Michael D. ;

Christen, Hans M. .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

[10] STRUCTURE OF A FERROELECTRIC AND FERROELASTIC MONODOMAIN CRYSTAL OF THE PEROVSKITE BIFEO3 [J].

KUBEL, F ;

SCHMID, H .

ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1990, 46 :698-702

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