Thermal mechanisms in laser ablation of GaAs

被引:14
作者
Craciun, V
Craciun, D
机构
[1] Laser Department, IFTAR
关键词
D O I
10.1016/S0169-4332(96)00740-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Estimations of GaAs surface temperature during laser irradiation, using recently published optical data and their temperature dependence for laser fluences around the melting threshold and photon-energies above the band-gap energy are presented in this work. These results are compared with the experimentally measured ablation threshold values of Okano et al. [J. Phys.: Condense Matter 6 (1994) 2697] and Vivet et al. [J. Appl. Phys. 78 (1995)]. The good agreement observed between the temperature estimations and the measured ablation threshold fluences suggests that thermal mechanisms are important in laser ablation of GaAs with photon-energies greater than the band-gap energy.
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收藏
页码:312 / 316
页数:5
相关论文
共 22 条
[1]  
Anderson C. L., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P653
[2]  
Crank J., 1984, Free and Moving Boundary Problems
[3]  
FENG T, 1996, NATO ASI SER, P496
[4]   MELTING THRESHOLD OF CRYSTALLINE AND AMORPHIZED SI IRRADIATED WITH A PULSED ARF (193 NM) EXCIMER LASER [J].
FOULON, F ;
FOGARASSY, E ;
SLAOUI, A ;
FUCHS, C ;
UNAMUNO, S ;
SIFFERT, P .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (04) :361-364
[5]   LASER MELTING OF GAAS COVERED WITH THIN METAL LAYERS [J].
GARCIA, BJ ;
MARTINEZ, J ;
PIQUERAS, J .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 51 (05) :437-445
[6]   INVESTIGATION OF LASER SPUTTERING OF IRON AT LOW FLUENCE USING RESONANCE IONIZATION MASS-SPECTROMETRY [J].
GIBERT, T ;
DUBREUIL, B ;
BARTHE, MF ;
DEBRUN, JL .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) :3506-3513
[7]   LASER-INDUCED ELECTRONIC PROCESSES ON GAP (110) SURFACES - PARTICLE-EMISSION AND ABLATION INITIATED BY DEFECTS [J].
HATTORI, K ;
OKANO, A ;
NAKAI, Y ;
ITOH, N .
PHYSICAL REVIEW B, 1992, 45 (15) :8424-8436
[8]   LASER ABLATION PROCESSES IMAGED BY HIGH-SPEED REFLECTION ELECTRON-MICROSCOPY [J].
HEINRICHT, F ;
BOSTANJOGLO, O .
APPLIED SURFACE SCIENCE, 1992, 54 :244-254
[9]   TIME-RESOLVED REFLECTIVITY MEASUREMENTS ON SILICON AND GERMANIUM USING A PULSED EXCIMER KRF LASER-HEATING BEAM [J].
JELLISON, GE ;
LOWNDES, DH ;
MASHBURN, DN ;
WOOD, RF .
PHYSICAL REVIEW B, 1986, 34 (04) :2407-2415
[10]   INTERBAND CRITICAL-POINTS OF GAAS AND THEIR TEMPERATURE-DEPENDENCE [J].
LAUTENSCHLAGER, P ;
GARRIGA, M ;
LOGOTHETIDIS, S ;
CARDONA, M .
PHYSICAL REVIEW B, 1987, 35 (17) :9174-9189