Monolithically integrated InGaAs-AlGaAs master oscillator power amplifier with grating outcoupler

被引：21

作者：

Uemukai, M

Matsumoto, N

Suhara, T

Nishihara, H

Eriksson, N

Larsson, A

机构：

[1] Osaka Univ, Fac Engn, Dept Elect, Suita, Osaka 5650871, Japan

[2] Chalmers Univ Technol, Dept Microelect, Photon Lab, SE-41296 Goteborg, Sweden

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 08期

关键词：

distributed Bragg reflector lasers; integrated optics; optical planar waveguide; quantum-well lasers; semiconductor optical amplifier; surface-emitting laser;

D O I：

10.1109/68.701514

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithically integrated master oscillator power amplifier with a grating outcoupler, fabricated using a simple process without regrowth and emitting a collimated output beam, is proposed and demonstrated using an InGaAs-AlGaAs strained single-quantum-well gradient-index separate-confinement-heterostructure. Stable single-mode lasing up to 124-mW output power was obtained under continuous-wave operation. An increase of the output beam divergence, due to a wavefront distortion produced in the power amplifier, was observed with increasing power amplifier injection current. The wavefront distortion can be compensated by an appropriate design of the grating outcoupler.

引用

收藏

页码：1097 / 1099

页数：3

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