HIGH-POWER 0.98-MU-M STRAINED-QUANTUM-WELL LASERS FABRICATED USING IN-SITU MONITORED REACTIVE ION-BEAM ETCHING

被引:11
作者
HAMAMOTO, K
CHIDA, H
MIYAZAKI, T
ISHIKAWA, S
机构
[1] Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305
关键词
D O I
10.1109/68.388737
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
0.98-mu m wavelength strained quantum-well buried ridge lasers were fabricated using in situ monitored reactive ion beam etching (RIBE). This technique allowed a very accurate ridge geometry, resulting in high single transverse-mode power more than 250 mW and high-fiber coupled power more than 150 mW.
引用
收藏
页码:602 / 604
页数:3
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