A low-parasitic collector construction for high-speed SiGe:C HBTs

被引：36

作者：

Heinemann, B ^{[1
]}

Barth, R ^{[1
]}

Bolze, D ^{[1
]}

Drews, J ^{[1
]}

Formanek, P ^{[1
]}

Grabolla, T ^{[1
]}

Haak, U ^{[1
]}

Höppner, W ^{[1
]}

Knoll, D ^{[1
]}

Köpke, K ^{[1
]}

Kuck, B ^{[1
]}

Kurps, R ^{[1
]}

Marschmeyer, S ^{[1
]}

Richter, HH ^{[1
]}

Rücker, H ^{[1
]}

Schley, P ^{[1
]}

Schmidt, D ^{[1
]}

Winkler, W ^{[1
]}

Wolansky, D ^{[1
]}

Wulf, HE ^{[1
]}

Yamamoto, Y ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a new collector construction for high-speed SiGe:C HBTs that substantially reduces the parasitic base-collector capacitance by selectively underetching of the collector region. The impact of the collector module on RF performance is demonstrated in separate bipolar processes for npn and prip devices. A minimum gate delay of 3.2ps was achieved for CML ring oscillators with npn transistors featuring f(T)/ f(max) values of 300GHz/250GHz at BVCEO = 1.8V. For pnp devices with f(T)/ f(max) values of 135GHz /140GHz at BVCEO = 2.5V a gate delay of 5.9ps is demonstrated. Further vertical scaling of the doping profiles increases f(T) to 380GHz at BVCEO = 1.5V for npn's and 155GHz at BVCEO = 2.3V for pnp's, but ring oscillator speed and f(max), degraded.

引用

页码：251 / 254

页数：4

共 6 条

[1] SiGe bipolar technology for automotive radar applications [J].

Böck, J ;

Schäfer, H ;

Aufinger, K ;

Stengl, R ;

Boguth, S ;

Schreiter, R ;

Rest, M ;

Knapp, H ;

Wurzer, M ;

Perndl, W ;

Böttner, T ;

Meister, TF .

PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2004, :84-87

[2]

Heinemann B, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P117

[3] 3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay [J].

Jagannathan, B ;

Meghelli, M ;

Chan, K ;

Rieh, JS ;

Schonenberg, K ;

Ahlgren, D ;

Subbanna, S ;

Freeman, G .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) :324-326

[4]

Rieh JS, 2003, CONF P INDIUM PHOSPH, P374

[5]

RIEH JS, 2004, RFIC S, P395

[6]

Rücker H, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P121

← 1 →