AlN thin films prepared by ion beam induced chemical vapour deposition

被引：17

作者：

Sanchez-Lopez, JC

Contreras, L

Fernandez, A

Gonzalez-Elipe, AR

Martin, JM

Vacher, B

机构：

[1] Univ Sevilla, CSIC, Inst Ciencia Mat, Ctr Invest Cient Isla Cartuja, Sevilla 41092, Spain

[2] Univ Sevilla, CSIC, Inst Invest Quim, Ctr Invest Cient Isla Cartuja, Sevilla 41092, Spain

[3] Ecole Cent Lyon, Dept Technol Surfaces, URA CNRS 855, Lab Trybol & Dynam Syst, F-69131 Ecully, France

来源：

THIN SOLID FILMS | 1998年 / 317卷 / 1-2期

关键词：

AlN thin films; UV-vis absorption; IBICVD;

D O I：

10.1016/S0040-6090(97)00602-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AIN thin films have been prepared by bombardment of a suitable substrate with a beam of accelerated N-2(+) ions (400 eV) while a flow of an organometallic precursor is directed onto its surface. This procedure has resulted in very compact and dense films of AIN obtained at room temperature. Since the films were amorphous by XRD, the formation of an AIN phase has been confirmed by different spectroscopies, while the morphology and optical properties of the films have been characterized by electron microscopy and ultraviolet-visible absorption. (C) 1998 Elsevier Science S.A.

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页码：100 / 104

页数：5

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