First-principles study of native defects in TlBr: Carrier trapping, compensation, and polarization phemomenon

被引:34
作者
Du, Mao-Hua [1 ,2 ]
机构
[1] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
[2] Oak Ridge Natl Lab, Ctr Radiat Detect Mat & Syst, Oak Ridge, TN 37831 USA
关键词
THALLOUS HALIDES; DETECTOR; PERFORMANCE; CRYSTALS; BROMIDE; TLCL;
D O I
10.1063/1.3476564
中图分类号
O59 [应用物理学];
学科分类号
摘要
First-principles calculations are carried out to study the native defect properties in TlBr. Three important results emerge: (1) the native defects are benign in terms of electron trapping because the low-energy defects do not induce electron traps; (2) the dominant defects in nearly stoichiometric TlBr are Schottky defects that pin the Fermi level near the midgap, leading to high resistivity; and (3) the calculated low diffusion barriers for several native defects show that ionic conductivity can occur at room temperature. The important impacts of these material properties on the room-temperature radiation detection using TlBr are discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3476564]
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页数:4
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