The dose, energy, and time dependence of silicon self-implantation induced transient enhanced diffusion at 750 degrees C

被引：36

作者：

Chao, HS ^{[1
]}

Griffin, PB ^{[1
]}

Plummer, JD ^{[1
]}

Rafferty, CS ^{[1
]}

机构：

[1] LUCENT TECHNOL INC, MURRAY HILL, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 14期

关键词：

D O I：

10.1063/1.116897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The short anneal time behavior of transient enhanced diffusion of dopants in silicon is investigated experimentally using a buried boron marker layer structure and varying Si implant doses and implant energies. The diffusion behavior of the marker layer shows that the diffusivity enhancements are, to the first order, independent of the implant conditions at short anneal times, while the overall transient motion increases with increasing implant conditions. The data are analyzed using an interstitial clustering model that includes both cluster evaporation and cluster growth terms. (C) 1996 American Institute of Physics.

引用

页码：2113 / 2115

页数：3

共 19 条

[1] Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions [J].