MODEL FOR BULK EFFECTS ON SI INTERSTITIAL DIFFUSIVITY IN SILICON

被引：38

作者：

GRIFFIN, PB ^{[1
]}

AHN, ST ^{[1
]}

TILLER, WA ^{[1
]}

PLUMMER, JD ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 02期

关键词：

D O I：

10.1063/1.98996

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：115 / 117

页数：3

共 12 条

[1]

AHN ST, 1986, OCT EL SOC M SAN DIE

[2]

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[3]

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PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817

[5] MEASUREMENT OF SILICON INTERSTITIAL DIFFUSIVITY [J].

GRIFFIN, PB ;

FAHEY, PM ;

PLUMMER, JD ;

DUTTON, RW .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :319-321

[6]

GRIFFIN PB, 1986, OCT EL SOC M SAN DIE

[7] EFFECT OF BACK-SIDE OXIDATION ON B AND P DIFFUSION IN SI DIRECTLY MASKED WITH SI3N4 FILMS [J].

MIZUO, S ;

HIGUCHI, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2292-2295

[8]

PLUMMER JD, 1986, COMPUTER CODE SUPREM

[9] 1D SIMULATION OF OXIDATION-ENHANCED AND OXIDATION-RETARDED DIFFUSION IN SILICON AND VALIDITY OF THE PHYSICAL MODEL - TRANSITION TO THE 2D CASE [J].

SCHEID, E ;

CHENEVIER, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02) :523-533

[10] POINT-DEFECTS, DIFFUSION-PROCESSES, AND SWIRL DEFECT FORMATION IN SILICON [J].

TAN, TY ;

GOSELE, U .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 37 (01) :1-17

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