MEASUREMENT OF SILICON INTERSTITIAL DIFFUSIVITY

[1] BRONNER GB, 1985, IMPURITY DIFFUSION G, V36, P49

[2] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (20) : 1814 - 1817

[3] FAHEY P, 1984, ELECTROCHEMICAL SOC, V84

[4] HO CP, 1984, TRSEL84001 STANF U S

[5] KINETICS OF INTERSTITIAL SUPERSATURATION DURING OXIDATION OF SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 449 - 451

[6] EFFECT OF BACK-SIDE OXIDATION ON B AND P DIFFUSION IN SI DIRECTLY MASKED WITH SI3N4 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2292 - 2295

[7] KINETICS OF SELF-INTERSTITIALS GENERATED AT THE SI/SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 961 - 963

[8] YEAGER HR, 1984, SOC IND APPLIED MATH

[1] BRONNER GB, 1985, IMPURITY DIFFUSION G, V36, P49

[2] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (20) : 1814 - 1817

[3] FAHEY P, 1984, ELECTROCHEMICAL SOC, V84

[4] HO CP, 1984, TRSEL84001 STANF U S

[5] KINETICS OF INTERSTITIAL SUPERSATURATION DURING OXIDATION OF SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 449 - 451

[6] EFFECT OF BACK-SIDE OXIDATION ON B AND P DIFFUSION IN SI DIRECTLY MASKED WITH SI3N4 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2292 - 2295

[7] KINETICS OF SELF-INTERSTITIALS GENERATED AT THE SI/SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 961 - 963

[8] YEAGER HR, 1984, SOC IND APPLIED MATH